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| (R) STPS360B(-TR)/B-1 POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM VF (max) FEATURES AND BENEFITS NEGLIGIBLE SWITCHING LOSSES LOW FORWARD DROP VOLTAGE LOW CAPACITANCE HIGH REVERSE AVALANCHE SURGE CAPABILITY TAPE AND REEL OPTION : -TR DESCRIPTION High voltage Schottky rectifier suited to Switch Mode Power Supplies and other Power Converters. Packaged in DPAK and IPAK, this device is intended for use in medium voltage operation, and particularly, in high frequency circuitries where low switching losses are required. ABSOLUTE RATINGS (limiting value) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM Tstg Tj dV/dt Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Storage temperature range Maximum junction temperature Critical rate of rise of reverse voltage Tcase = 140C = 0.5 tp = 10 ms Sinusoidal tp = 2 s F = 1kHz Value 60 6 3 50 1 - 65 to + 150 150 10000 V/s Unit V A A A A C DPAK STPS360B IPAK STPS360B-1 4 3A 60 V 0.59 V 3 2 4 (TAB) 4 2 1 3 3 1 2 July 1998 - Ed : 2B 1/5 STPS360B(-TR)/B-1 THERMAL RESISTANCES Symbol Rth(j-c) Junction to case Parameter Value 3.5 Unit C/W STATIC ELECTRICAL CHARACTERISTICS Symbol IR * VF ** Tests Conditions Reverse leakage current Forward voltage drop Tests Conditions Tj = 25C Tj = 125C Tj = 25C Tj = 125C VR = 60 V 3 IF = 3 A IF = 3 A 0.55 Min. Typ. Max. 30 10 0.65 0.59 Unit A mA V Pulse test : * tp = 380 s, < 2 % ** tp = 5 ms, < 2% To evaluate the maximum conduction losses use the following equation : 2 P = 0.49 x IF(AV) + 0.035 IF (RMS) Typical junction capacitance, VR = 0V F = 1MHz Tj = 25C C = 700pF Fig. 1: Average forward power dissipation versus average forward current. PF(av)(W) 2.5 2.0 1.5 1.0 T Fig. 2: Average forward current versus ambient temperature (=0.5). IF(av)(A) = 0.1 = 0.05 = 0.2 3.5 = 0.5 Rth(j-a)=Rth(j-c) 3.0 = 1 2.5 Rth(j-a)=65C/W 2.0 1.5 1.0 0.5 tp T 0.5 IF(av) (A) 0.0 0.0 0.5 1.0 1.5 2.0 2.5 =tp/T =tp/T tp Tamb(C) 50 75 100 125 150 0.0 3.0 3.5 4.0 0 25 2/5 STPS360B(-TR)/B-1 Fig. 3: Non repetitive surge peak forward current versus overload duration (maximum values). IM(A) 16 14 12 10 8 6 4 2 0 1E-3 IM t Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) 1.0 0.9 0.8 0.7 = 0.5 0.6 0.5 0.4 = 0.2 0.3 = 0.1 0.2 Single pulse 0.1 0.0 1E-3 Ta=25C Ta=50C T Ta=100C =0.5 t(s) 1E-2 1E-1 1E+0 tp(s) 1E-2 1E-1 =tp/T tp 1E+0 Fig. 5: Reverse leakage current versus reverse voltage applied (typical values). IR(A) 1E-2 Tj=125C Fig. 6: Junction capacitance versus reverse voltage applied (typical values). C(pF) 500 200 100 50 F=1MHz Tj=25C 1E-3 1E-4 1E-5 Tj=100C Tj=75C Tj=25C 1E-6 1E-7 VR(V) 0 5 10 15 20 25 30 35 40 45 50 55 60 20 10 VR(V) 1 2 5 10 20 50 100 Fig. 7: Forward voltage drop versus forward current (maximum values). IFM(A) 50.0 Tj=125C Fig. 8: Thermal resistance junction to ambient versus copper surface under tab (Epoxyprinted circuit board FR4, copper thickness: 35m). Rth(j-a) (C/W) 100 80 10.0 Tj=25C 60 40 20 1.0 VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 S(Cu) (cm ) 0 0 2 4 6 8 10 12 14 16 18 20 3/5 STPS360B(-TR)/B-1 PACKAGE MECHANICAL DATA IPAK DIMENSIONS REF. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 V1 Millimeters Min. 2.2 0.9 0.7 0.64 5.2 0.3 0.45 0.48 6 6.4 4.4 15.9 9 0.8 0.8 10 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 1 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 Typ. Max. Min. 2.4 1.1 1.3 0.9 5.4 0.85 0.086 0.035 0.027 0.025 0.204 0.035 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.031 0.039 10 Inches Typ. Max. 0.094 0.043 0.051 0.035 0.212 0.033 A E B2 L2 C2 D H L L1 B6 B3 B V1 A1 B5 G C A3 4/5 STPS360B(-TR)/B-1 PACKAGE MECHANICAL DATA DPAK DIMENSIONS REF. A A1 A2 B B2 C C2 D E G H L2 L4 V2 FOOT PRINT DIMENSIONS (in millimeters) 6.7 Millimeters Min. Typ. Max 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 0.80 0.60 0 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 Inches Min. Typ. Max. 0.086 0.035 0.001 0.025 0.204 0.017 0.018 0.236 0.251 0.173 0.368 0.031 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.259 0.181 0.397 0.039 8 1.00 0.023 8 0 6.7 6.7 3 1.6 2.3 2.3 1.6 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsIbility for the consequences of use of such informationnor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5 |
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